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In addition, SOI also has higher transconductance, reduced parasitic capacitance, weakened short-channel effect, and steeper sub-threshold slope. Compared with bulk silicon circuits, SOI circuits have a 100-fold increase in radiation resistance. In high temperature environments, the performance of SOI devices is significantly better than that of bulk devices. First of all, the channel of fd soi does not need to be doped, because undoped silicon that is thin enough can achieve full depletion. Of course, your point of view itself has problems. The electrons come from the source, drain, and bulk to the channel to form the depletion layer, not just from the substrate. Its.
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